Anhydrous Hydrogen Fluoride for Vapour-Phase Etching of Silicon Dioxide Films in MEMS

The market for microelectromechanical systems (MEMs) is growing rapidly with no end in sight, as the devices become pervasive in high-growth applications such as automotive, mobile and consumer products. Additionally, Internet of things (IoT) devices are pushing sensors and connectivity into high-volume products, which calls for cost-effective, high-performance, and high-reliability MEMS devices. This means MEMS manufacturing processes need to become more efficient than ever.

Etch release is one of the most critical MEMS processes used to fabricate the mechanical structures that vibrate, rotate, or move in some other way. It’s important that these various parts move freely. For example, a MEMS microphone doesn’t work if stiction prevents the membrane from vibrating. In this detailed scientific paper, memsstar’s experts describe a vapour-phase etch process that offers an efficient way to etch so that the parts don’t stick together. You’ll learn:

  • The challenges with MEMS etch release processes
  • The difference between wet etching and vapour-phase etching
  • An approach using Hydrogen Fluoride (HF) as the etchant mechanism
  • How silicon and silicon dioxide films respond to HF
  • Process factors to consider when using HF

Simply provide the following information and you’ll be able to download this informative white paper for free.